Infineon IPZ65R019C7 CoolMOS™ S7 Power Transistor: Datasheet, Features, and Application Notes

The relentless pursuit of higher efficiency and power density in modern power electronics is largely driven by advancements in semiconductor technology. At the forefront of this innovation is Infineon's CoolMOS™ S7 family, with the IPZ65R019C7 standing out as a pinnacle of performance in high-voltage superjunction MOSFETs. Designed for demanding switch-mode power supplies (SMPS), this transistor sets a new benchmark by minimizing both conduction and switching losses.

Key Features and Benefits

The IPZ65R019C7 is engineered with several groundbreaking features that translate into superior system performance:

Ultra-Low On-State Resistance (RDS(on)): With a maximum RDS(on) of just 19 mΩ at a gate-source voltage of 10 V, this device drastically reduces conduction losses. This allows for higher efficiency operation, especially at high load conditions, and reduces the need for excessive heat sinking.

Optimized for High-Frequency Operation: The CoolMOS™ S7 technology features exceptionally low gate charge (QG) and drastically reduced internal capacitances. This enables hard-switching topologies to operate at significantly higher switching frequencies, which in turn allows for the use of smaller passive components like magnetics and capacitors, increasing overall power density.

High Robustness and Reliability: Rated for 650 V drain-source voltage, it offers a comfortable margin for handling voltage spikes in universal mains applications (85 V AC – 305 V AC). The product is also qualified according to the JEDEC standard for 100% avalanche ruggedness, ensuring high reliability under extreme operating conditions.

Improved Body Diode Performance: The intrinsic body diode exhibits a softer reverse recovery behavior compared to previous generations. This characteristic is crucial for reducing switching noise and voltage stress in circuits like power factor correction (PFC) and LLC resonant converters.

Primary Applications

The combination of low losses and high switching speed makes the IPZ65R019C7 an ideal choice for a wide range of high-efficiency power conversion systems, including:

Server, telecom, and industrial SMPS

Power Factor Correction (PFC) stages (both interleaved and single-phase)

LLC resonant converters for DC-DC conversion

Solar inverters and UPS systems

Lighting and motor drive applications

Critical Datasheet Parameters

When designing with this component, engineers should pay close attention to the following absolute maximum ratings and characteristics from its datasheet:

Drain-Source Voltage (VDS): 650 V

Continuous Drain Current (ID): 32 A (at TC = 100°C)

RDS(on) (max): 19 mΩ (VGS = 10 V, ID = 16 A)

Total Gate Charge (QG): ~ 75 nC (typ)

Avalanche Energy (EAS): 960 mJ

Application Notes and Design Considerations

1. Gate Driving: To fully exploit the high-speed switching capability, a low-inductance, high-current gate drive circuit is essential. A gate driver IC with a peak output current of several amperes is recommended to quickly charge and discharge the input capacitance.

2. Layout Parasitics: Minimizing parasitic inductance in the main power loop (drain and source connections) is critical to suppress voltage overshoot and ringing during switching transitions. This involves using short, wide traces or a ground plane.

3. Thermal Management: Despite its low RDS(on), effective thermal management through a PCB heatsink (copper pours) or an external heatsink is necessary to maintain a low junction temperature and ensure long-term reliability.

4. EMI Considerations: The fast switching edges can contribute to electromagnetic interference (EMI). Careful layout, the use of snubbers, and proper filtering may be required to meet EMI standards.

ICGOOODFIND

The Infineon IPZ65R019C7 CoolMOS™ S7 represents a significant leap in high-voltage MOSFET technology, offering a near-perfect balance of ultra-low conduction loss and exceptional switching performance. It is an indispensable component for engineers aiming to push the boundaries of efficiency and power density in next-generation power supplies and energy conversion systems.

Keywords:

1. High-Efficiency

2. Superjunction MOSFET

3. Ultra-Low RDS(on)

4. High-Frequency Switching

5. Power Density