Infineon FS50R12KT4_B15: High-Performance 50A 1200V IGBT Module for Advanced Power Conversion Systems

Release date:2025-10-29 Number of clicks:100

Infineon FS50R12KT4_B15: High-Performance 50A 1200V IGBT Module for Advanced Power Conversion Systems

The relentless drive for higher efficiency, greater power density, and enhanced reliability in power electronics is met by advanced components designed to push the boundaries of performance. The Infineon FS50R12KT4_B15 stands as a prime example, engineered specifically for demanding applications within advanced power conversion systems. This 50A, 1200V IGBT module encapsulates cutting-edge technology to serve as the powerhouse in a multitude of industrial and renewable energy applications.

At its core, this module utilizes Infineon's latest IGBT4 TrenchStop technology. This proprietary design is pivotal for achieving exceptionally low saturation voltages (VCE(sat)) and minimal switching losses. The result is a significant boost in overall system efficiency, which is paramount for reducing operational costs and heat generation. The low-loss characteristics allow for higher switching frequencies, enabling designers to use smaller passive components like inductors and capacitors, thereby increasing the power density of the entire system.

The robust 1200V breakdown voltage ensures reliable operation in circuits with high DC-link voltages, commonly found in three-phase systems powered by 480VAC mains. This makes the module an ideal choice for heavy-duty industrial drives, high-power UPS (Uninterruptible Power Supplies), and solar inverters. Furthermore, the advanced internal substrate and bonding technology enhance the power cycling capability and operational lifetime, even under severe conditions with wide temperature fluctuations.

A key feature of the FS50R12KT4_B15 is its compact and rugged half-bridge topology. This integrated design reduces the need for external components and simplifies PCB layout, leading to more reliable and compact inverter designs. The module also offers a low thermal resistance path from the silicon die to the baseplate, ensuring that heat is effectively transferred to the heatsink. This superior thermal performance is critical for maintaining junction temperatures within safe limits, thus maximizing the module's output current capability and long-term reliability.

ICGOODFIND: The Infineon FS50R12KT4_B15 is a high-performance IGBT module that sets a benchmark for efficiency and reliability. Its use of advanced TrenchStop technology, high current and voltage ratings, and superior thermal properties make it an exceptional choice for engineers designing next-generation power conversion systems in industrial automation, renewable energy, and traction applications.

Keywords: IGBT Module, Power Conversion, TrenchStop Technology, High Power Density, Thermal Performance.

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