Infineon IPN70R600P7S: A 700V CoolMOS Power Transistor for High-Efficiency Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching devices. Infineon Technologies addresses these challenges with the IPN70R600P7S, a 700V superjunction MOSFET (CoolMOS™ P7) that sets a new benchmark for performance in high-efficiency switching applications. This device is engineered to minimize losses and maximize reliability in systems ranging from switched-mode power supplies (SMPS) and server PSUs to industrial motor drives and lighting solutions.

At the core of the IPN70R600P7S is Infineon’s advanced CoolMOS™ P7 superjunction technology. This technology achieves an exceptional balance between low on-state resistance (R DS(on)) and low gate charge (Q G). With a maximum R DS(on) of just 0.6 Ω, conduction losses are significantly reduced. Simultaneously, the low gate charge ensures extremely fast switching speeds and minimizes driving losses. This superior figure-of-merit (R DS(on) x Q G) translates directly into higher overall system efficiency, allowing designers to either push for higher power densities or reduce the need for complex cooling mechanisms.

A key feature of the IPN70R600P7S is its integrated ESD protection and high ruggedness. The device is designed to withstand severe operating conditions, including repetitive avalanche events and a wide safe operating area (SOA). This inherent robustness enhances system reliability and longevity, reducing the risk of field failures. Furthermore, the transistor boasts an ultra-low effective output capacitance (C OSS eff), which is crucial for minimizing switching losses, particularly in quasi-resonant (QR) and hard-switching topologies. This leads to cooler operation and further efficiency gains, especially at higher switching frequencies.

The 700V drain-source voltage rating provides a safety margin for universal mains applications (85 V AC to 305 V AC), making it an ideal choice for offline power supplies. This headroom is critical for handling voltage spikes and transients, ensuring stable and safe operation under unpredictable grid conditions. The device is offered in the industry-standard TO-220 FullPAK package, which combines the familiar footprint with the benefit of a fully isolated mounting base, simplifying the assembly process and improving thermal management.

In summary, the Infineon IPN70R600P7S represents a significant leap forward in high-voltage power switching technology. Its blend of ultra-low losses, high ruggedness, and integrated protection features makes it a superior choice for designers aiming to create the next generation of efficient, compact, and reliable power conversion systems.

ICGOOODFIND: The Infineon IPN70R600P7S is a top-tier 700V CoolMOS™ that excels in high-efficiency and high-density power designs, offering an optimal balance of low conduction and switching losses, superior robustness, and ease of use.

Keywords: CoolMOS P7, High-Efficiency Switching, Superjunction MOSFET, Low Gate Charge, 700V Transistor.